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• 0.5 dB N.F.min. • 20 dBm Output Power (P1dB)

• 16.5 dB Small-Signal Gain (SSG)

• 37 dBm Output IP3

• RoHS compliant (Directive 2002/95/EC) GENERAL DESCRIPTION:

The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 750 µm Schottky barrier Gate.

The Filtronic 0.25µm process ensures class-leading noise performance.

The use of a small footprint plastic package allows for cost effective system implementation.

Datasheet: click here

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