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MRFE8VP8600H
Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
Configuration
Dual Common Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Mode of Operation
OFDM
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
115
Maximum Gate Source Voltage (V)
10
Maximum Gate Threshold Voltage (V)
2.3
Maximum VSWR
20
Maximum Gate Source Leakage Current (nA)
1000
Maximum IDSS (uA)
20
Typical Input Capacitance @ Vds (pF)
452@50V
Typical Reverse Transfer Capacitance @ Vds (pF)
1.62@50V
Typical Output Capacitance @ Vds (pF)
71.2@50V
Typical Forward Transconductance (S)
19.4
Maximum Power Dissipation (mW)
1250000
Output Power (W)
125
Typical Power Gain (dB)
21
Maximum Frequency (MHz)
860
Minimum Frequency (MHz)
470
Typical Drain Efficiency (%)
30
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Automotive
No
Pin Count
5
Supplier Package
NI-1230H
Military
No
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