MRFE8VP8600H

Product Technical Specifications

EU RoHS

Compliant 

ECCN (US)

EAR99

Part Status

Active

Configuration

Dual Common Source

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

2

Mode of Operation

OFDM

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

115

Maximum Gate Source Voltage (V)

10

Maximum Gate Threshold Voltage (V)

2.3

Maximum VSWR

20

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

20

Typical Input Capacitance @ Vds (pF)

452@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.62@50V

Typical Output Capacitance @ Vds (pF)

71.2@50V

Typical Forward Transconductance (S)

19.4

Maximum Power Dissipation (mW)

1250000

Output Power (W)

125

Typical Power Gain (dB)

21

Maximum Frequency (MHz)

860

Minimum Frequency (MHz)

470

Typical Drain Efficiency (%)

30

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Automotive

No

Pin Count

5

Supplier Package

NI-1230H

Military

No